The ideal, universal memory would be an ultra fast non volatile memory.
To achieve this goal semiconductor companies have integrated new materials into the
well-known silicon circuits that store information permanently even without a supply voltage.
One of the leading candidates to become a mass product are ferroelectric based random
access memories (FeRAM). This technology substitutes the DRAM capacitor which is a
dielectric material with a hysteretic ferroelectric material like Lead
Zirconate Titanate (PZT) or Strontium Bismuth Tantalate (SBT).
Commercially available memory sizes are 1 Mbit (Ramtron). Prototypes have been
realized up to 64 Mbit (TI, Samsung).
Alternative non volatile memories based on new technologies are polymer memories
that change their resistance with an applied voltage. Another representative of
resistive memories is the phase change memory. The resistance of the material changes
from a crystaline into an amorphous state. This is achieved by an electrically induced local
melting of the material.
aixACCT Systems provides material characterization and device test systems for
ferroelectric, polymer, and phase change memories.