The FE module is available in different performance levels.
The standard configuration offers a frequency range from 1 mHz to 5 kHz.
A special high speed hardware configuration of Basic Unit and FE-Moddule offers a frequency range up to 1 MHz for high speed applications.
The ferroelectric test module TF Analyzer 2000 FE is designed to make various measurements
on ferroelectric materials to determine its main electronic characteristics.
Standard features of the FE-Module are:
Static hysteresis measurement
Leakage current measurement
Impedance measurement (only with the high speed system configuration)
As further options, which are essentially for testing ultra thin films and for
ultra small capacitors, aixACCT offers as unique features of the TF Analyzer 2000 E series:
This module allows the investigation of magnetoresistive and ferroic materials. Additional hardware components are required like they are described in the aixMR system documentation. The module supplies a constant current excitation and measures the voltage drop across the sample with a high accuracy four point measurement.
The relaxation module TF Analyzer 2000 RX is designed to investigate polarization
and depolarization currents of dielectric and ferroelectric materials. This module
uses the voltage step method with a six decade current amplifier, which allows
measurements without changing the amplification range. It is especially designed to
investigate the relaxation behavior and the leakage current of integrated capacitors.
Investigation of the self discharge behavior of dielectric materials: voltage pulse
method with a charge amplifier offering 30 fF input capacitance.
The DRAM module TF Analyzer 2000 DR is designed to measure the self-discharge behaviour
of charged integrated capacitors to test the suitability of the material for
DRAM applications and to check the minimum pulse width of a write operation.
With small pad sizes, starting from approximately 10 Ám squared capacitors the
influence of the parasitic capacitance becomes increasingly important. For sub
micrometer dimensions the compensation is essentially in order to derive correct
and precise results. The only way to measure these data correctly is with the aixACCT
patented method of a compensation of the influence during the measurement. Using a numerical
calculation to compensate this influence does not work, because
the recording amplifier is already saturated by the contribution of the parasitic
capacitor to the current response.
With ultra thin films the influence of leakage current becomes significant on
the results of the hysteresis curve of the ferroelectric material. A compensation
based on static leakage current measurements is not very accurate and is
very time consuming. Therefore a method has been developed by aixACCT to eliminate the
influence of the leakage current on the results of the hysteresis curve. Using
hysteresis measurements, the influence of the leakage current can be eliminated and
the remaining material property is received.