advanced customized characterization technology

 
About aixACCT History of Innovations
      2014
    • e31 on full wafer utilizing DBLI technology
    • world first temperature measurements with DBLI
    • Electronic measurement system
    • Thermoelectric measurement system
      2013
    • Multiferroic Test system
    • High temperature sample holder for Multiferroics Test system
    • e31,f vs. bias voltage
    • High temperature (600°C) and low temperature (-100°C) sample holder for piezoelectric bulk materials
      2012
    • Blocking Force Measurement for piezoelectronic MEMS
    • Contact restistance vs. contact force on 8 Wafers
    • Poling system for complex electrode configurations
      2011
    • Single beam functionality integrated into DBLI technology
    • Long Term stability of DBLI technology demonstrated (better 0,5 % without any adjustment of optics)
      2010
    • Impedance measurement implemented TF Analyzer
    • Displacement vs frequenz implemented into aixPES system
      2009
    • d15 option for bulk materials including pulse test (pulse width 10µs) into aixPES technologie
      2008
    • Piezoelectric Transducer Test Bench for comprhensive characterization of bulk materials and multilayer actuators with mechanical prestress. Sensors and actuators and harvester can be characterized!
      2007
    • Introducing CMA system for characterization of multilayer acutators for e.g. fine positioning as well as for fuel injection systems. The tool can derive figure of merit of an actuator under a wide temperature range.
      2006
    • Unique and patented sample holder for thin film e31,f piezocoefficient measurements utilizing 4-point bending technique
      2005
    • Patent and implementation of a new dynamic leakage current compensation method (DLCC)
    • DLCC is about 100 times faster than conventional static leakage compensation methods
      2003
    • World first measurements on single cell testing on wafer level after full integration on 32 MBit chain FeRAM
      2002
    • Sample holder for high voltage and high temperature application, suitable also for displacement measurements
    • Double laser beam interferometer with a resolution < 1 Picometer
      2001
    • First published direct hysteresis measurement on 200 nm x 200 nm ferroelectric capacitor structures
    • Hysteresis measurement at 1 MHz and 10 MHz by virtual ground testing of 1T1C memory cells
      2000
    • First direct hysteresis measurement on real FeRAM memory cell capacitor
      1999
    • Foundation of the aixACCT Systems GmbH
    • Hysteresis measurement on pad sizes down to 1 μm x 1 μm
      1998
    • Fast pulse switching testing, equal in speed to real operation frequency of a FeRAM
      1997
    • Introduction of static hysteresis measurement
      1994 - 1996
    • Prototypes of RX and DR module of TF ANALYZER 2000 have been used in the DRAM DARPA project to evaluate the suitability of BST for high density memory application
      1995
    • Founded by government funding, assigned to the Chair of Prof. Waser at the RWTH University of Aachen
Quick Links
Newsletter
Contact
Recommend This Site